Tiny electronic devices, called microelectronics, may one day be printed as easily as words on a page, thanks to new research from scientists at the U.S. Department of Energy's (DOE) Argonne National ...

The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. “We ...

High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...

Saelig Company, Inc. has announced availability of the CLIPPER CLP1500V15A1, an oscilloscope adapter that allows small voltages to be measured in the presence of very high voltages, such as those ...

Freescale Semiconductor today introduced two LDMOS RF power transistors that allow wireless base station amplifiers to cover all channels in an entire allocated frequency band. The high-efficiency ...

NXP Semiconductors N.V. announced the industry’s first medium power transistors in a 2-mm x 2-mm 3-pin leadless DFN package. Offering a unique solution in an ultra-small DFN2020-3 (SOT1061) ...

Scientists from France’s CEA-Ines developed a 400 W micro-inverter with a power density of 1.1 kW/L and an efficiency of 97%. The device utilizes GaN 600V diodes and power transistors developed by CEA ...

Why do GaN and SiC devices need unique test equipment? Power semiconductors employing silicon carbide (SiC) and gallium nitride (GaN) have higher power density, smaller size, better high temperature ...